Evidence map›Paper›PMID 35334757›Full record

ArticleMicromachines2022

A 2.5 V, 2.56 ppm/°C Curvature-Compensated Bandgap Reference for High-Precision Monitoring Applications.

Guangqian Zhu, Zhaoshu Fu, Tingting Liu, Qidong Zhang, Yintang Yang

Abstract read
In one paragraph

Article in Micromachines, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Guangqian ZhuSchool of Microelectronics, Xidian University, Xi'an 710071, China.
Zhaoshu FuSchool of Microelectronics, Xidian University, Xi'an 710071, China.
Tingting LiuSchool of Microelectronics, Xidian University, Xi'an 710071, China.
Qidong ZhangSchool of Microelectronics, Xidian University, Xi'an 710071, China.
Yintang YangSchool of Microelectronics, Xidian University, Xi'an 710071, China.

Funding

Industry-University-Academy Cooperation Program of Xidian University-Chongqing IC Innova-tion Research Institute CQIRI-2021CXY-Z01Key Research and Development Project of Shaanxi Province 2017ZDXM-GY-001
6 · The paper itself

Abstract

This work presents a high-precision high-order curvature-compensated bandgap voltage reference (BGR) for battery monitoring applications. The collector currents of bipolar junction transistor (BJT) pairs with different ratios and temperature characteristics can cause greater nonlinearities in ΔV

Indexed as

bandgap referencebattery monitoringBCD processcurvature compensationlow temperature coefficient

Identifiers

PMID35334757
PMCPMC8953402

What Socratic holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the Socratic graph.