ArticleMicromachines2025
Process Optimization for Metal-Contact Etching in 3D Integration Devices.
Article in Micromachines, 2025. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
This study investigates a metal-contact etching process that differs from conventional device contact etching by focusing on the film-stack configuration and the associated super-contact etching characteristics. Because metal-contact etching is closely linked to both physical profiles and electrical performance, evaluating a single parameter provides limited insight; thus, the physical profile characteristics of metal-contact etching and 3D-integrated super-contacts were comprehensively examined. In the first-step etch, the target depth in the wafer left region was approximately 2365 Å, and the bottom surface exhibited a desirable rounded profile. Following the removal of liner TEOS and nitride, the stopping margin was evaluated under three conditions: (1) metal-contact etching with a ~22 s target reduction, (2) a CMOS image-sensor baseline incorporating an interlayer-dielectric-reduction scheme, and (3) a high-selectivity condition achieved by increasing the C
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