Evidence map›Paper›PMID 41728934›Full record

ArticleACS nano2026

Junctionless Silicon Nanowire Transistors without the Use of Impurity Doping.

Soundarya Nagarajan, Dirk König, Ingmar Ratschinski, Giulio Galderisi, Somayeh Shams, Thomas Mikolajick, Daniel Hiller, Jens Trommer

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in ACS nano, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Soundarya NagarajanNaMLab gGmbH, Nöthnitzer Str. 64a, Dresden 01187, Germany.
Dirk KönigDepartment of Material Physics, Research School of Physics, Australian National University (ANU), Canberra ACT 2601, Australia.ORCID 0000-0001-5485-9142
Ingmar RatschinskiInstitute of Applied Physics (IAP), Technische Universität Bergakademie Freiberg, Leipziger Str. 23, Freiberg 09599, Germany.
Giulio GalderisiNaMLab gGmbH, Nöthnitzer Str. 64a, Dresden 01187, Germany.
Somayeh ShamsInstitute of Applied Physics (IAP), Technische Universität Bergakademie Freiberg, Leipziger Str. 23, Freiberg 09599, Germany.
Thomas MikolajickNaMLab gGmbH, Nöthnitzer Str. 64a, Dresden 01187, Germany.ORCID 0000-0003-3814-0378
Daniel HillerInstitute of Applied Physics (IAP), Technische Universität Bergakademie Freiberg, Leipziger Str. 23, Freiberg 09599, Germany.ORCID 0000-0001-8774-4069
Jens TrommerNaMLab gGmbH, Nöthnitzer Str. 64a, Dresden 01187, Germany.ORCID 0000-0003-2972-438X

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

With the shrinking dimensions of semiconductor structures reaching the nanoscale, conventional impurity doping techniques face several challenges due to their statistical nature, temperature dependence, and degradation in efficiency of the doping method. In addition, the cryogenic operation of highly doped transistors is complicated due to carrier freeze-out, which significantly reduces the availability of mobile charges, degrading device performance and inducing noise. Here, an innovative material solution is presented that enables silicon nanowire junctionless transistors without requiring impurity doping within the active semiconductor region. To this end, a SiO

Indexed as

charge carrier transportcryogenic electronicsdirect modulation dopingjunctionless transistorsilicon transistor

Identifiers

PMID41728934
PMCPMC12981024

What Socratic holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the Socratic graph.