ArticleACS applied materials & interfaces2026
Examination within a Photonic Memory-Based Framework: Al and In Dual-Doped ZnO Thin Film UV Photosensor Devices.
Article in ACS applied materials & interfaces, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
The main focus of our study is to examine and report the room-temperature enhancement of the optoelectronic and photoresponsive performance of ZnO materials induced by dual doping with Al and In, achieved by tailoring the materials' structural and morphological characteristics. Structural analyses confirmed the formation of the hexagonal wurtzite ZnO phase, while doping induced noticeable modifications in the microstructure and morphology of the films. The crystallite size was found to decrease from 54.96 nm for undoped ZnO to 38.66 nm for ZnO/1.0% Al/1.0% In films, indicating dopant-induced grain refinement. Also, morphological analysis revealed that the particle thickness decreased from ∼400.1 to ∼201.6 nm, resulting in an increased surface:volume ratio. We conducted a systematic investigation focusing primarily on their persistent photoconductivity characteristics. Further analyses were performed to examine the detailed mechanisms of photocurrent generation, to observe photonic memory effects, to determine photosensor properties and device sensitivity, and to assess the effects of traps. The sensor devices were tested under a UV light source with a wavelength of 400 nm and an intensity of 75 μW/cm
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