Evidence map›Paper›PMID 42485221›Full record

ArticleAdvanced materials (Deerfield Beach, Fla.)2026

Unveiling Transition Dipole Moment Anisotropy and Symmetry Breaking Mechanism in Wurtzite Nitride Toward Polarization-Sensitive Ultraviolet Detection.

Jinjie Zhu, Qing Cai, Shengjie Zhang, Pengfei Shao, Huiqin Zhao, Saisai Wang, Linling Xu, Haifan You, Hui Guo, Bin Liu and 5 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced materials (Deerfield Beach, Fla.), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

15 authors.

Jinjie ZhuKey Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, China.ORCID https://orcid.org/0000-0002-5605-8768
Qing CaiKey Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, China.
Shengjie ZhangKey Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, China.
Pengfei ShaoKey Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, China.
Huiqin ZhaoKey Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, China.
Saisai WangKey Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, China.
Linling XuKey Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, China.
Haifan YouKey Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, China.ORCID https://orcid.org/0000-0003-0099-6074
Hui GuoKey Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, China.
Bin LiuKey Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, China.
Hai LuKey Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, China.
Jiandong YeKey Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, China.
Youdou ZhengKey Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, China.
Rong ZhangKey Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, China.ORCID https://orcid.org/0000-0003-0015-6331
Dunjun ChenKey Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, Key Laboratory of Optoelectronic Devices and Systems with Extreme Performances of MOE and School of Electronic Science and Engineering, Nanjing University, Nanjing, China.

Funding

Advanced Materials-National Science and Technology Major Project 2026ZD0622202Ministry of Education Engineering Research Center for Optoelectronic Materials and Chip TechnologyNational Natural Science Foundation of China 62474089National Natural Science Foundation of China 62504104National Natural Science Foundation of China 62534003National Natural Science Foundation of China 625B2082Postdoctoral Fellowship Program of CPSF GZC20231098Provincial Science and Technology Major Project of Jiangsu BG2024030
6 · The paper itself

Abstract

Polarization detection in shortwave spectrum using wurtzite wide-bandgap semiconductors remains challenging due to the isotropic limitations of conventional polar crystal planes. Nonpolar planes offer a promising route, yet the underlying physical mechanism is unclear. Here, we establish a direct correlation between crystallographic polarity and anisotropic photoresponse on nonpolar a-plane GaN, demonstrating an intrinsic polarization-sensitive photodetection scheme. Crystal-field-induced valence band splitting yields distinct transition dipole moments from heavy-hole and crystal field split-off bands to the conduction band minimum, enabling selective absorption for light polarized perpendicular or parallel to the c-axis. Using the nonpolar plane of GaN, electron transition probability between the heavy-hole band and conduction band minimum for polarization perpendicular to the c-axis is selectively enhanced, governing polarization-angle-dependent absorption. Our device achieves a high dichroic ratio of 3.79 (318% higher than c-plane) and an ultrafast response speed of 1.7 µs at 10 V, surpassing conventional polar-plane architectures and prior polarization-sensitive detectors. Furthermore, by introducing an oxygen injection layer to strategically break lattice symmetry, anisotropic charge density distribution around oxygen atoms further enhances the dichroic ratio. Exceptional polarization discrimination is validated in single-pixel polarized imaging and intensity/polarization binary-channel optical communication encryption. This work establishes a material-intrinsic paradigm for high-sensitivity polarization detection, offering new perspectives for multidimensional optoelectronics.

Indexed as

anisotropynonpolarpolarization‐sensitiveultraviolet

Identifiers

PMID42485221
PMCPMC13532454

What Socratic holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the Socratic graph.