ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026
Electroforming-Free, Self-Rectifying Selector-Only Memory With Diffusive Cu-Ion Dynamics for Logic-In-Memory Computing.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
A selector-only memory (SOM), performing the dual functions of a selector and memory in a single device, has emerged as a promising candidate to overcome critical issues such as high aspect ratio and thermal disturbance in 3D X-point arrays (3DXP) for compute-express-link (CXL). Nevertheless, previously reported SOMs based on ovonic threshold switching (OTS) still have limitations in adoption as a new memory solution for 3DXP, owing to the requirement of an electroforming process at high voltage, bidirectional high current flow, and the intrinsic drift phenomenon. Here, we report a novel electroforming-free self-rectifying SOM (SR-SOM) that exhibits a diode-like unidirectional current flow and high endurance of ∼10
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